An Investigation of Scanning Capacitance Microscopy on Iron-Contaminated p-Type Silicon-Reference-Cited by-同舟云学术

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An Investigation of Scanning Capacitance Microscopy on Iron-Contaminated p-Type Silicon

Published:2001 Issue:9 Volume:4 Page:G69
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Chang M. N.,Chang T. Y.,Pan F. M.,Wu B. W.,Lei T. F.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference17 articles.

1. Effective channel length and base width measurements by scanning capacitance microscopy

2. Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal–oxide–semiconductor field-effect transistor

3. Scanning capacitance microscope methodology for quantitative analysis of p-n junctions

4. Electrical simulation of scanning capacitance microscopy imaging of the pn junction with semiconductor probe tips

5. Charge storage in a nitride‐oxide‐silicon medium by scanning capacitance microscopy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and Detection of Metals in Silicon and Germanium;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

2. Contrast distortion induced by modulation voltage in scanning capacitance microscopy;Applied Physics Letters;2012-08-20

3. Observation of Differential Capacitance Images on Slightly Iron-Contaminated p-Type Silicon;Electrochemical and Solid-State Letters;2002

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