Hot-Electron-Induced Electron Trapping in 0.13 μm nMOSFETs with Ultrathin (EOT=1.6 nm) Nitrided Gate Oxide-Reference-Cited by-同舟云学术

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Hot-Electron-Induced Electron Trapping in 0.13 μm nMOSFETs with Ultrathin (EOT=1.6 nm) Nitrided Gate Oxide

Published:2005 Issue:8 Volume:8 Page:G187
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Chen Ching-Wei,Chien Chao-Hsin,Perng Tsu-Hsiu,Chang Chun-Yen

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference24 articles.

1. Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics

2. 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

3. Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion

4. Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology

5. 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

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