Programming and Erasing Operations of Nitride-Nitride-Oxynitride Stacked Thin Film Transistor Device-Reference-Cited by-同舟云学术

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Programming and Erasing Operations of Nitride-Nitride-Oxynitride Stacked Thin Film Transistor Device

Published:2011 Issue:2 Volume:158 Page:H166
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Doyoung,Son Hyukjoo,Jung Sungwook,Jang Kyungsoo,Pillai Krishnakumar,Kim Hyungjun,Yi Junsin

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. TFT Backplane Technologies for AMLCD and AMOLED Applications

2. A Novel LTPS-TFT Pixel Circuit Compensating for TFT Threshold-Voltage Shift and OLED Degradation for AMOLED

3. Low-Temperature Polycrystalline Silicon Thin-Film Transist or Technologies for System-on-Glass Displays

4. Low-Voltage Driven P-Type Polycrystalline Silicon Thin-Film Transistor Integrated Gate Driver Circuits for Low-Cost Chip-on-Glass Panel

5. Hybrid 8-bit Digital-to-Analog Converter for Mobile Active Matrix Flat Panel Displays Using Low-Temperature Polycrystalline Silicon Thin Film Transistors

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