Towards Graphene Field Effect Transistors

Abstract

Field effect device (FED) manufactured from monolayer graphene are investigated. A conventional CMOS-compatible top-down process flow is applied, except for graphene deposition. From IVcharacteristics carrier mobilities in graphene pseudo-MOS structures are extracted and compared to state-of-the-art silicon MOSFETs. The extracted values outperform the universal mobility of silicon and silicon-on-insulator MOSFETs.