Effect of Ge Diffusion on AlxGa1-xN/GaN High Electron Mobility Transistors on a Thin Silicon-On-Insulator
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Published:2013-10-02
Issue:12
Volume:2
Page:Q105-Q108
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ISSN:2162-8742
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Container-title:ECS Solid State Letters
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language:en
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Short-container-title:ECS Solid State Letters
Author:
Bera L. K.,Tham W. H.,Kajen R. S.,Dolmanan S. B.,Krishna Kumar M.,Lin V. K. X.,Ang D. S.,Bhat T. N.,Yakovlev N.,Tripathy S.
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials