Abstract
TFTs can be used as driving or detecting devices for purposes of optical, chemical, or biological sensing, imaging, displays, etc. Assuming the stability is not an issue, the poly-Si, IGZO, and a-Si:H TFTs were compared with respect to the device driving capability. For the drain-attached device, the maximum available power is determined by the device’s resistance and the TFT’s on-current. For the gate-attached device, the study is based on connecting a resistor and a capacitor in parallel. The raise or decay of the drain current is dependent on the RC time delay. Although the high mobility TFT has many advnatages, the low mobility TFT is adequate for certain applications. In real applications, the manufactuability and cost are important factors in choosing the TFT.
Publisher
The Electrochemical Society
Cited by
1 articles.
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