Influence of High Dose Gamma Irradiation on Electrical Characteristics of Si Photo Detectors-Reference-Cited by-同舟云学术

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Influence of High Dose Gamma Irradiation on Electrical Characteristics of Si Photo Detectors

Published:2017 Issue:10 Volume:6 Page:Q132-Q135
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Kumar M. Vinay,Kumar Santosh,Cheng Chun,Asokan K.,Kumar Ashish,Shobha V.,Karanth S. P.,Krishnaveni S.

Funder

UGC-IUAC

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

2. Effect of high dose γ-ray irradiation on GaAs p-i-n photodetectors

3. Comparison of the effects of electron and proton irradiation on n+–p–p+ silicon diodes

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1. On-Orbit Response Analysis of Silicon Photodetectors in 4-Pi Sun Sensor of Aditya-L1 Mission;Indian Journal of Pure & Applied Physics;2024

2. Ionizing radiation response of bismuth titanate-based metal-ferroelectric-semiconductor (MFS) type capacitor;Microelectronics Reliability;2022-06

3. Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements;Radiation Physics and Chemistry;2021-06

4. 3.3 kV Class 4 H-SiC Double-Implanted MOSFET With Excellent Radiation Hardness Against Gamma Rays Using Counter-Doped Junction Termination Extension;IEEE Electron Device Letters;2021-05

5. Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements;Journal of Materials Science: Materials in Electronics;2020-04-16

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