Process Optimization of HfAlO Trapping Layer for High Performance Charge Trap Flash Memory Application
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Published:2013-03-08
Issue:1
Volume:52
Page:967-972
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Zhang Dong,Huo Zongliang,Yang Xiaonan,Liu Ziyu,Chen Guoxing,Han Yulong,Sun Zhong,Chu Yuqiong,Wang Chenjie,Yang Baohe,Liu Ming
Abstract
In order to explore the correlation between process control of HfAlO film deposition and memory performance, 10nm HfAlO trapping layer was deposited by atom layer deposition (ALD) system, using three different deposition sequence of HfO2 and Al2O3 thin films (1nmHfO2/1nmAl2O3, 1nmHfO2/ 2nmAl2O3 and 3nmHfO2/1nmAl2O3). Comparing with HfO2 single trapping layer, the HfAlO samples stacked in the sequence of 1nmHfO2/1nmAl2O3 and 1nmHfO2/ 2nmAl2O3 have faster program/erase speed, lager memory window, and significantly improved data retention characteristics. This is due to the high dielectric constant of HfO2 and appropriate band offset of HfO2 to Al2O3, also with the extra interface inserted between HfO2 and Al2O3.
Publisher
The Electrochemical Society