Effects of Diffusion‐Induced Strain and Dislocation on Phosphorus Diffusion into Silicon-Reference-Cited by-同舟云学术

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Effects of Diffusion‐Induced Strain and Dislocation on Phosphorus Diffusion into Silicon

Published:1978-11-01 Issue:11 Volume:125 Page:1840-1845
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Matsumoto Satoru¹,Akao Yasushi¹,Kohiyama Kiyoyuki¹,Niimi Tatsuya¹

Affiliation:

1. Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2131307/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of sinks of intrinsic point defects on phosphorus diffusion in Si;Semiconductors;2002-11

2. Failure Mechanisms of Integrated Circuits—A Review;IETE Technical Review;1990-09

3. Influence of electrolytic hydrogen on the etch pit density of iron (110) surfaces;Applied Physics A Solids and Surfaces;1984-12

4. Process Modeling;Analysis and Simulation of Semiconductor Devices;1984

5. Penetration Depth of Diffusion-Induced Dislocations;Japanese Journal of Applied Physics;1983-07-20

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