Liquid‐Phase Epitaxial Growth of Gallium‐Doped Silicon-Reference-Cited by-同舟云学术

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Liquid‐Phase Epitaxial Growth of Gallium‐Doped Silicon

Published:1978-11-01 Issue:11 Volume:125 Page:1817-1824
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Sumner B. E.¹²,Foley R. T.¹²

Affiliation:

1. Night Vision and Electro‐Optics Laboratory, Fort Belvoir, Virginia 22060

2. The American University, Washington, D.C. 20016

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2131303/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films;Chemistry of Materials;2022-12-08

2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015

3. Liquid Phase Epitaxy;Advances in Materials Research;2009

4. Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

5. Low temperature liquid phase epitaxy of silicon from gallium solution;Journal of Crystal Growth;1995-10

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