(Invited) Silicon Nanowires: Donors, Surfaces and Interface Defects
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Published:2016-08-25
Issue:4
Volume:75
Page:179-187
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Fanciulli Marco,Paleari Stefano,Belli Matteo,Lamperti Alessio
Abstract
In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the Pb centers at the Si/SiO2 interface.
Publisher
The Electrochemical Society