Author:
Rodriguez R.,Martin-Martinez J.,Crespo-Yepes A.,Porti M.,Nafria M.,Aymerich X.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability
2. On the breakdown statistics of very thin SiO2 films
3. Degraeve R. Groeseneken G. Bellens R. Depas M. Maes H. E. , International Electron Devices Meeting, 863 (1995).
4. Cester A Cimino S. Paccagnella A. Ghidini G. Guegan G. , IEEE International Reliability Physics Symposium, 189 (2003).
5. Gate Oxide Wear-Out and Breakdown Effects on the Performance of Analog and Digital Circuits