Control of Material Interactions in Advanced High-k Metal Gate Stacks

Abstract

Material interactions in advanced high-κ / metal gate stacks can have a significant effect of the performance of completed devices. The effect of these interactions was investigated using planar MOS capacitor stacks that might be used for the gate of a MOS transistor. Gate electrode materials included TaN, TaSiN, and W, and HfSiO and HfSiON were used as the gate dielectric materials with an ultra-thin SiO2 interface between the silicon substrate and the dielectric. Deposition methods included CVD and ALD.