Dynamic Interaction of NO2with a Nanostructure Modified Porous Silicon Matrix: Acidity, Sensor Response, and the Competition for Donor Level Electrons
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference50 articles.
1. Nanostructure-Directed Physisorption vs Chemisorption at Semiconductor Interfaces: The Inverse of the HSAB Concept
2. Nanostructure Modified Gas Sensor Detection Matrix for NO Transient Conversion of NO to NO2
3. Novel Concept for the Formation of Sensitive, Selective, Rapidly Responding Conductometric Sensors
4. Selectivity Improvements and Response Time Scale of Porous Silicon Conductometric Gas Sensors
5. Active Nanostructures at Interfaces for Photocatalytic Reactors and Low-power Consumption Sensors
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1. Formation of Multilayer Structures with Integrated Membranes Based on Porous Silicon;Semiconductors;2020-05
2. Long-Range Interaction Between NO2 Molecules, Impurity Boron Atoms and Si Atoms with Dangling Bonds in Porous Silicon;physica status solidi (b);2018-02-07
3. Formation of Acceptor States on the Silicon Hydroxylated Surface Upon NO2 Molecules Adsorption;physica status solidi (b);2017-11-20
4. Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations;Journal of Nano- and Electronic Physics;2017
5. Modeling the diffusion/absorption response of a nanopore coated microporous silicon interface;Journal of Applied Physics;2016-03-28
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