Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment-Reference-Cited by-同舟云学术

Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment

Published:2009 Issue:9 Volume:156 Page:H716
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lin Chao-Cheng,Chang Ting-Chang,Tu Chun-Hao,Chen Wei-Ren,Hu Chih-Wei,Sze Simon M.,Tseng Tseung-Yuen,Chen Sheng-Chi,Lin Jian-Yang

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. A Floating Gate and Its Application to Memory Devices

2. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

3. Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

4. Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

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