Author:
Shimura Takayoshi,Okamoto Yuki,Shimokawa Daisuke,Inoue Tomoyuki,Hosoi Takuji,Watanabe Heiji,Sakata Osami,Umeno Masataka
Abstract
Thermal stability and the electron irradiation damage to the ordered structure in the thermal oxide on Si substrates are shown, together with the fundamentals of the quasi-amorphous structural model. The mechanism and rate enhancement of SiGe oxidation is also discussed based on the ordered structure in the oxide layer.
Publisher
The Electrochemical Society
Cited by
1 articles.
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