Reactive Ion Etch Processes for Amorphous Silicon Thin Film Transistors: A Based Chemistry-Reference-Cited by-同舟云学术

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Reactive Ion Etch Processes for Amorphous Silicon Thin Film Transistors: A Based Chemistry

Published:1994-02-01 Issue:2 Volume:141 Page:502-506
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kuo Yue¹,Schrott A. G.¹

Affiliation:

1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2054754/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reactive ion etching of tantalum in silicon tetrachloride;Microelectronic Engineering;2022-04

2. Interfacial barrier free organic-inorganic hybrid electrolytes for solid state batteries;Energy Storage Materials;2021-05

3. Plasma Etching in a-Si:H TFT Array Fabrication;Thin Film Transistors;2004

4. Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05

5. Etch Stop Techniques for Micromachining;Journal of The Electrochemical Society;1997-06-01

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