Orientation Dependence of Si1-xCx:P Growth and the Impact on FinFET Structures

Abstract

The shift of device design to more complex structures with multiple crystallographic orientations has significantly complicated the incorporation of mobility enhancing stressors. The growth rate, composition and crystalline perfection of these stressors is dependent on the crystal orientation and is therefore of significant importance. For embedded source-drain and FinFET devices there are multiple crystallographic orientations present during the epitaxial stressor growth process. The compositional, growth rate and crystal quality dependence of Si1-xCx:P blanket epitaxial growth results on (001), (011), and (111) oriented Si substrates will be discussed and how they relate to the processing of FinFET device structures.