Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics-Reference-Cited by-同舟云学术

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Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Published:2010 Issue:9 Volume:13 Page:H313
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Salas-Villasenor A. L.,Mejia I.,Hovarth J.,Alshareef H. N.,Cha D. K.,Ramirez-Bon R.,Gnade B. E.,Quevedo-Lopez M. A.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference39 articles.

1. Organic Thin Film Transistors for Large Area Electronics

2. 120 °C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates

3. Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates

4. New challenges in thin film transistor (TFT) research

5. Synthesis and Characterization of Hydroxyapatite Nanopowders by Emulsion Technique

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