Author:
Oh Jung-Hun,Han Min,Moon Sung-Woon,Lee Seokhun,Hwang In-Seok,Kim Sam-Dong
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance
2. K. Chang, I. Bahl, and V. Nair ,RF and Microwave Circuit and Component Design for Wireless Systems, p. 405, John Wiley & Sons, New York (2002).
3. Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novel composite channels design
4. F. Schwiers and J. J. Liou ,Modern Microwave Transistors, p. 190, John Wiley & Sons, New York (2003).
5. Study of the fabrication of PHEMTs for a 0.1 μm scale Γ-gate using electron beam lithography: structure, fabrication, and characteristics
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献