(Invited) III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications

Abstract

The aligned growth of III-nitride nanowires, along with results providing insights into the nanowire properties obtained using electrical, optical and structural characterization techniques, are discussed. A new "top-down" approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter is also presented, along with results from preliminary LEDs grown on these nanorod arrays. Additionally, a novel application of aligned nanowire arrays as strain-relief templates for the growth of high quality GaN is demonstrated.