Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond Part II

Abstract

Sze’s theory has been the dominating theory regarding the Schottky emission effect (image force barrier lowering). The author noticed that the older and almost forgotten Krömer’s theory can frequently give a much better fit to experimental data especially for higher reverse bias voltage. In order to explain Krömer’s theory, it is necessary to apply the concept of velocity overshoot and quasi-ballistic transport to the depletion region in Schottky diodes. In this paper, the author will propose a unified theory for reverse leakage current in Schottky diodes.