Abstract
Silicon nanowire (SiNW) arrays are formed by Ag-assisted electroless etching at 25°C in 25% HF solution with AgO having concentration ranging from M = 0.003 to 0.2 mol/l. The maximum length of the SiNWs is ∼65 μm at an M of ∼0.045 mol/l. Optical absorption spectroscopy and Fourier-transform infrared spectroscopy show that the SiNWs have extremely large optical absorbability not only in the UV region but also in the far-infrared region. No photoluminescence is observed from the AgO/HF-formed SiNWs that are in direct contrast with the conventional AgNO3/HF-formed nanowires that generally emit orange light. Post-stain etching in the HF/HNO3 solution of the AgO/HF-formed nanowires enables light emission in the orange region. Passive HF etching of the SiNWs changes their wettability from highly hydrophilic (∼0°) to superhydrophobic (∼147°). This Ag-assisted electroless etching mechanism can be explained on the basis of an energy-band diagram of the Ag/p-Si interface in the AgO/HF solution.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Cited by
23 articles.
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