Author:
Comedi David M.,Zalloum Othman,Blakie Darren,Wojcik Jacek,Mascher Peter
Abstract
The formation of Si-nc embedded in amorphous Si oxides promoted by thermal annealing of SiyO1-y films (y=0.34-0.45) fabricated by plasma enhanced chemical vapor deposition is examined by X- ray diffraction and electron microscopy. UV and synchrotron radiation excited photoluminescence from the obtained structures is also studied and its origin elucidated
Publisher
The Electrochemical Society
Cited by
4 articles.
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