Electron Tunneling Between Si Quantum Dots and Two Dimensional Electron Gas under Optical Excitation at Low Temperatures

Author:

Sakurai Yoko,Takada Yukihiro,Iwata Juin-Ichi,Shiraishi Kenji,Nomura Shintaro,Muraguchi Masakazu,Endoh Tetsuo,Shigeta Yasuteru,Ikeda Mitsuhisa,Makihara Katsunori,Miyazaki Seiichi

Abstract

We present results of the electron tunneling between Si-dots and the two-dimensional electron gas (2DEG) under the optical excitation at low temperatures, where modification of the 2DEG is caused by optical generation of the electron-hole pairs. We have found that the gate voltage for electron injection to Si-dots becomes remarkably smaller with increase in optical excitation intensity, while the gate voltage for electron emission shows little dependence. The difference in the observed dependences of the gate voltage for electron injection and emission process is explained our proposal which consider the geometrical matching of initial and final state electron wave functions

Publisher

The Electrochemical Society

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3