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A Fabrication of Germanium Nanocrystal Embedded in Silicon-Oxygen-Nitride Layer

  • Published:2006 Issue:12 Volume:9 Page:G358
  • ISSN:1099-0062
  • Container-title:Electrochemical and Solid-State Letters
  • language:en
  • Short-container-title:Electrochem. Solid-State Lett.

Author:

Tu Chun-Hao,Chang Ting-Chang,Liu Po-Tsun,Liu Hsin-Chou,Weng Chi-Feng,Shy Jang-Hung,Tseng Bae-Heng,Tseng Tseung-Yuan,Sze Simon M.,Chang Chun-Yen

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference14 articles.

1. A Floating Gate and Its Application to Memory Devices

2. Nanocrystal nonvolatile memory devices

3. Y. C. King, T. J. King, and C. Hu , IEEE Int. Electron Devices Meeting Tech. Dig. , 115 (1998).

4. Room temperature operation of a quantum-dot flash memory
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