Selective Deposition of Cu Interconnects by Prepatterned Ta Film-Reference-Cited by-同舟云学术

Selective Deposition of Cu Interconnects by Prepatterned Ta Film

Published:2006 Issue:5 Volume:153 Page:C301
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Yang Chin-Hao,Yang Wen-Luh,Chang Wei,Tseng Wan-Wen

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films

2. Comparison of (hexafluoroacetylacetonate)Cu(vinyltrimethylsilane) and (hexafluoroacetylacetonate)Cu(allyltrimethylsilane) for metalorganic chemical vapor deposition of copper

3. Kinetics of copper drift in low-κ polymer interlevel dielectrics

4. Copper Transport in Thermal SiO2

5. Improved diffusion barriers for copper metallization obtained by passivation of grain boundaries in electroless deposited cobalt-based films

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