Author:
Suzuki Yuya,Zadeh Daryoush H.,Kakushima Kuniyuki,Ahmet Parhat,Kataoka Yoshinori,Nishiyama Akira,Sugii Nobuyuki,Tsutsui Kazuo,Natori Kenji,Hattori Takeo,Iwai H.
Abstract
InGaAs surface nitridation effect on La2O3/InGaAs interface has been investigated. It was found that by controlling nitridation conditions such as temperature interface quality can be improved. Also a new covalent structure based on nitridated Si and La2O3 is proposed to reduce dielectric and substrate intermixing, thus improving the high-k/InGaAs interface.
Publisher
The Electrochemical Society