Building III-V Devices onto Large Si Wafers

Abstract

This paper reviewed the process developments when building III-V devices onto large Si wafers using Applied Materials’ 300mm III-V metal-organic chemical vapor deposition tool (MOCVD). Anti-phase defects free GaAs films were achieved by optimizing the surface pre-cleaning and growth conditions on industrial standard 300mm Si (100) wafers. High quality growth on patterned wafers was also demonstrated for III-V FinFET applications.