Deterministic Assembly of In0.53Ga0.47As p+-i-n+ Nanowire Junctions for Tunnel Transistors

Abstract

Electric-field-assisted deterministic assembly is used to position arrays of p+-i-n+ In0.53Ga0.47As nanowires on a Si substrate for de-vice integration. Forces induced on the solution-suspended wires by a spatially varying, nonuniform electric field determines the po-sition of each wire with respect to lithographic features on the sub-strate. The electrical properties of the sub-50 nm diameter In0.53Ga0.47As junctions with a 100 nm thick unintentionally doped channel were characterized after adding source and drain contacts. The junctions showed clear rectification, with a forward bias ideal-ity factors as low as 1.8, and reverse leakage current as small as 20 pA at a -1 V bias. This represents an important step towards demonstrating an In0.53Ga0.47As-based nanowire tunnel transistor.