Characteristics of Vertical Thermal/PECVD Polysilicon Oxides Formed on the Sidewall of Polysilicon Films-Reference-Cited by-同舟云学术

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Characteristics of Vertical Thermal/PECVD Polysilicon Oxides Formed on the Sidewall of Polysilicon Films

Published:2003 Issue:1 Volume:150 Page:G28
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lee M. Z.,Chang Y. A.,Lee Chung-Len,Lei Tan-Fu

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Electrical characterization of ultra-shallow junctions formed by diffusion from a CoSi/sub 2/ layer

2. Thermal SiO2films on n+polycrystalline silicon: Electrical conduction and breakdown

3. Self-operating adaptive MLSE for digital mobile radio

4. Investigation of microstructure and grain growth of polycrystalline silicon deposited using silane and disilane

5. Plasma damage and photo-annealing effects of thin gate oxides and oxynitrides during O2 plasma exposure

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