Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing-Reference-Cited by-同舟云学术

Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing

Published:2009 Issue:1 Volume:156 Page:H10
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Hasebe Rui,Teramoto Akinobu,Kuroda Rihito,Suwa Tomoyuki,Sugawa Shigetoshi,Ohmi Tadahiro

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. T. Ohmi ,Extended Abstracts of the International Symposium on Semiconductor Manufacturing Technology, Realize, Inc., p. 3 (1992).

2. T. Ohmi , Abstract 302, p. 495, The Electrochemical Society Extended Abstracts, Vol. 93-2, New Orleans, LA, Oct 10-15, 1993.

3. W. Kern ,Handbook of Semiconductor Wafer Cleaning Technology, Chap. 2, p. 102, Noyes Publications, Park Ridge, NJ (1993).

4. M. Merius, S. Verhaverbeke, P. W. Mertens, H. F. Schmidt, A. L. P. Rotondaro, and M. M. Heyns , inCleaning Technology in Semiconductor Device Manufacturing, J. Ruzyllo and R. E. Novak , Editors, PV 94-7, p. 15, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).

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