Abstract
High temperature direct wafer bonding (~1000°C) is used for the manufacturing of various products since early 1990s. The development of low temperature wafer bonding methods (< 400°C) in early 2000s increased significantly the adoption of direct bonding in semiconductor devices manufacturing as it allowed for bonding of wafers fully processed in CMOS technology. Additionally the revival of an older process: surface activated bonding, increased the number of process choice options. The main features of the various direct wafer bonding processes currently available are presented, with the goal to provide helpful knowledge allowing for direct wafer bonding process selection.
Publisher
The Electrochemical Society
Cited by
2 articles.
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