Refined Characterization Up to Millimeter Waves of Ferroelectric KTN Thin Film for Efficient Integrated Tunable Devices
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Published:2013-08-31
Issue:7
Volume:58
Page:237-242
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Houzet Gregory,Lacrevaz Thierry,Bermond Cedric,Le Febvrier Arnaud,Députier Stephanie,Guilloux-Viry Maryline,Queffelec Patrick,Fléchet Bernard
Abstract
A KTa0.65Nb0.35O3 thin film has been deposited by Pulsed Laser Deposition on MgO substrate. By means of specific metallization patterns, such as CPW transmission lines and interdigitated capacitors, a broad-band characterization of devices is performed from 40 MHz up to 67 GHz with the superposition of static E-field to polarize the ferroelectric KTN film. Next, the complex permittivity of the 400nm KTN thin film is deduced from these HF measurements using a refined extraction procedure. Results show a distributed relaxation on all the frequency range, ruled by a Cole-Davidson model. Results on tunability of the capacitance devices are promising and reach a value of 64% under a static E-field of 400 kV/cm.
Publisher
The Electrochemical Society