In Situ Boron (B) Doped Germanium (Ge:B) Grown on (100), (110), and (111) Silicon: Crystal Orientation and B Incorporation Effects

Abstract

We investigate the growth of in situ boron (B) doped Ge (denoted as Ge:B) on Si(100), (110) and (111) substrates at low temperature using an ultra-high vacuum chemical vapor deposition (UHVCVD) tool. The growth rate of Ge:B on Si(100) is higher than that on Si(110) at 320 ˚C. The growth of Ge:B on Si(111) achieves 3D quantum dots at 320 ˚C and continuous film at 300 ˚C. The growth rate of Ge:B on Si(111) at 300 ˚C is much lower than other two orientations at 320 ˚C. For all the orientations, Ge:B shows a higher growth rate than intrinsic Ge.