Effect of Annealing Time on Structure, Composition and Electrical Characteristics of Self-Assembled Pt Nanocrystals in Metal-Oxide-Semiconductor Memory Structures-Reference-Cited by-同舟云学术

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Effect of Annealing Time on Structure, Composition and Electrical Characteristics of Self-Assembled Pt Nanocrystals in Metal-Oxide-Semiconductor Memory Structures

Published:2012 Issue:3 Volume:1 Page:Q47-Q51
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Tseng Jiun-Yi,Chen Yuan-Tsung,Hsu Chia-Hao,Wu Tai-Bor,Wu Maw-Kuen

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Baik S. J. Choi S. Chung U-In. Moon J. T. , IEDM Tech. Dig., 545 (2003).

2. Guarini K. W. Black C. T. Zhang Y. Babich I. V. Sikorski E. M. Gignac L. M. , IEDM Tech. Dig., 541 (2003).

3. Fast and Reliable Tunnel Programming of Nanocrystal Nonvolatile Memories

4. Prince B. , “Emerging Memories : Technologies and Trends” by Kluwer Academic Publishers, p. 133 (2002).

5. A silicon nanocrystals based memory

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