Reliability Characteristics of W/WN/TaO[sub x]N[sub y]/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors-Reference-Cited by-同舟云学术

Reliability Characteristics of W/WN/TaO[sub x]N[sub y]/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors

Published:2002 Issue:7 Volume:149 Page:G403
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Cho Heung-Jae,Cha Tae-Ho,Lim Kwan-Yong,Park Dae-Gyu,Kim Jae-Young,Kim Joong-Jung,Heo Sung,Yeo In-Seok,Park Jin Won

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference21 articles.

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3. D.-G. Park, H.-J. Cho, C. Lim, I.-S. Yeo, J.-S. Roh, C.-T. Kim, and J.-M. Hwang,Technical Digest of the VLSI Symposium, p. 46 (2000).

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