High Density Plasma Damage in InGaP/GaAs and AlGaAs/GaAs High Electron Mobility Transistors-Reference-Cited by-同舟云学术

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High Density Plasma Damage in InGaP/GaAs and AlGaAs/GaAs High Electron Mobility Transistors

Published:1998-11-01 Issue:11 Volume:145 Page:4036-4039
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Lee J. W.¹,Pearton S. J.¹,Ren F.²,Kopf R. F.²,Kuo J. M.²,Shul R. J.³,Constantine C.⁴,Johnson D.⁴

Affiliation:

1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

2. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974

3. Sandia National Laboratories, Albuquerque, New Mexico 87185

4. Plasma‐Therm Inc., St. Petersburg, Florida 33716

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838910/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature;Journal of The Electrochemical Society;2007

2. Damage to III–V devices during electron cyclotron resonance chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07

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