Interface Morphology Investigation of Bonded p-GaAs/p-Si Wafers
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Published:2010-10-01
Issue:4
Volume:33
Page:371-374
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Hsieh Cheng-Yu,Wu YewChung S.
Abstract
The integration of GaAs and Si can combine the superior electrical and optical properties of GaAs with the mechanical and economical advantages of Si. It presents great potential for OEICs applications. In this study, direct wafer bonding was applied to combine bulk p-Si and p-GaAs. Interface morphologies of bonded p-GaAs/p-Si wafers were investigated by TEM.
Publisher
The Electrochemical Society