Carrier Transport and Charge Detrapping in Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate)/n-Type Si and Polyaniline/n-Type Si Diodes-Reference-Cited by-同舟云学术

Carrier Transport and Charge Detrapping in Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate)/n-Type Si and Polyaniline/n-Type Si Diodes

Published:2012-12-28 Issue:3 Volume:2 Page:Q31-Q33
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Lin Yow-Jon,You Chang-Feng,Chuang Cheng-Yu

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Modification of PEDOT:PSS as hole injection layer in polymer LEDs

2. Microelectromechanical resonators based on an all polymer/carbon nanotube composite structural material

3. Performance improvement of polymer solar cells by using a solvent-treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) buffer layer

4. Increasing the work function of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) by ultraviolet irradiation

5. Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodes

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