Quantitative Analysis of Transition Metals Penetrating the Silicon Substrate by Dopant Ion Implantation

Abstract

The behavior of metals penetrating the silicon substrate by the collision of dopant ion and surface metals are quantitatively demonstrated. We have found using silicon step etching followed by ICP-MS and SIMS that several percent of surface metals penetrate silicon and are present at a little shallower region than the depth of the highest dopant concentration after ion implantation. The depth of metals penetrating the silicon substrate during dopant ion implantation and subsequent annealing is found to depend on metal species. We have also found using recombination lifetime and Si photoluminescence measurements that carrier traps are generated in silicon by metal penetration even when implanted through SiO2.