Author:
Ritala Heini,Kiihamäki Jyrki
Abstract
Anhydrous HF vapor etching of sacrificial silicon dioxide thin films grown by plasma enhanced and low pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. Film compositions as well as etch residue were analyzed. Effects of oxide deposition method, precursors, annealing and oxide composition on etch rate are discussed.
Publisher
The Electrochemical Society
Cited by
1 articles.
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