Effects of Microstructure and As Doping Concentration on the Electrical Properties of LPCVD Polysilicon-Reference-Cited by-同舟云学术

Effects of Microstructure and As Doping Concentration on the Electrical Properties of LPCVD Polysilicon

Published:1991-11-01 Issue:11 Volume:138 Page:3465-3469
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Lee E. G.¹²,Im H. B.¹²

Affiliation:

1. Semiconductor Unit Process Division, GoldStar Electron Company, Limited, Seoul, Korea

2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Seoul, Korea

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2085435/pdf

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