Two-dimensional Chemical Delineation of Junction Profile with High Spatial Resolution and Application in Failure Analysis in 65nm Technology Node

Abstract

In this work, we reported a new FIB-assisted polishing technique and a new chemical junction-staining recipe for the chemical delineation of junction profile of a 65nm device. With the new polishing technique and recipe, two-dimensional junction profile was successfully delineated with a clear LDD (lightly doped drain) profile. The delineation of the LDD profile indicates the high chemical selectivity of the staining recipe. The as-developed new polishing technique and new junction-staining recipe were successfully applied to a real failure analysis case in which defects related to the inhomogeneous implantation process were successfully identified