Improved Characteristics for Metal-nGaSb Ohmic Contact by Using Indium Gallium Zinc Oxide (IGZO)
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Published:2013-08-31
Issue:7
Volume:58
Page:361-365
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Shin Jeong-Hun,Jung Hyun-Wook,Park Jin-Hong
Abstract
We introduce an excellent Ohmic contact technique in n-type GaSb by using a thin (~ 5 nm thick) Indium Gallium Zinc Oxide (IGZO), achieving a high on-current density of 6.804 A/cm3 and a low on/off-current ratio of 1.64 and also resolving Fermi level pinning problem near the valence band edge. A thin IGZO on n-type GaSb annealed at 500°C before metal deposition contributes to Ohmic contact formation because of two main causes; (1) InSb narrows the energy bandgap and (2) free Sb as traps induces tunneling current.
Publisher
The Electrochemical Society