(Invited) Electron Band Alignment at Ge/Oxide and AIII-BV/Oxide Interfaces from Internal Photoemission Experiments

Abstract

Application of internal photoemission spectroscopy for determination of energy barriers and band offsets at interfaces of semiconductor crystals with deposited oxide insulators is overviewed. Systematic analysis of the results allows one to reveal several general trends in the evolution of the interface band alignment including the common anion rule and the band offset transitivity rule, which enables evaluation of the band offsets on the basis of the semiconductor and insulator bandgap width values.