Location Effects of Extended Defects on Electrical Properties of p+‐n Junction-Reference-Cited by-同舟云学术

Location Effects of Extended Defects on Electrical Properties of p+‐n Junction

Published:1989-03-01 Issue:3 Volume:136 Page:768-772
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Ryoo K.¹²³,Drosd R.¹²³,Wood W.¹²³

Affiliation:

1. Wacker Siltronic Corporation., Portland, Oregon 97129

2. Bipolar Integrated Technology, Incorporated, Beaverton, Oregon 97006

3. Oregon Graduate Center, Beaverton, Oregon 97006‐1999

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2096739/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A failure mechanism and improved method for abnormal IDS leakage current of shield gate trench MOSFET;Materials Science in Semiconductor Processing;2023-11

2. Influence of boron implantation induced defects on solar cells: Modeling the process defects;Journal of Applied Physics;2023-02-14

3. A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices;Journal of Applied Physics;2015-11-14

4. TCAD-based DLTS simulation for analysis of extended defects;physica status solidi (a);2014-01

5. Applications of single-wafer rapid-thermal processing to the manufacture of advanced flash memory;IEEE Transactions on Semiconductor Manufacturing;2003-05