High-Density RF MIM Capacitors Using High-k La[sub 2]O[sub 3] Dielectrics-Reference-Cited by-同舟云学术

High-Density RF MIM Capacitors Using High-k La[sub 2]O[sub 3] Dielectrics

Published:2004 Issue:7 Volume:151 Page:F162
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Yang M. Y.,Yu D. S.,Chin Albert

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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4. The Physical and Electrical Characteristics of Ta[sub 2]O[sub 5] and Physical Vapor Deposited Ru in Metal-Insulator-Metal Capacitors

5. Metallorganic Chemical Vapor Deposition of Ru Films Using Cyclopentadienyl-Propylcyclopentadienylruthenium(II) and Oxygen

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