Author:
Chang Liann-Be,Ko Hong-Hsi,Jeng Ming-Jer,Lee Yu-Lin,Lai Chao-Sung
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Modeling of direct tunneling current through gate dielectric stacks
2. Characterization of 1.9- and 1.4-nm Ultrathin Gate Oxynitride by Oxidation of Nitrogen-implanted Silicon Substrate
3. M. L. Ogas, R. G. Southwick, B. J. Cheek, R. J. Baker, G. Bersuker, and W. B. Knowlton ,2004 International Integrated Reliability Workshop Final Report, IEEE, p. 32 (2004).
4. Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
5. C. H. Choi, J. S. Goo, T. Y. Oh, Z. Yu, R. W. Dutton, A. Bayoumi, M. Cao, P. V. Voorde, and D. Vook ,Symposium on VLSI Technology, p. 63, (1999).
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