Comparison of Electrical Properties of Silicon-on-Insulator Structures Fabricated with Use of Hydrogen Slicing and BESOI-Reference-Cited by-同舟云学术

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Comparison of Electrical Properties of Silicon-on-Insulator Structures Fabricated with Use of Hydrogen Slicing and BESOI

Published:2004 Issue:3 Volume:7 Page:F21
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Antonova I. V.,Nikolaev D. V.,Naumova O. V.,Popov V. P.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference10 articles.

1. The structure of ultrathin oxide on silicon

2. Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy

3. Back-to-back substrate wafer bonding: A new approach to the fabrication of double-side coated wafers

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